leshan radio company, ltd. epitaxial planar type npn silicon transistor z features 1) high dc current gain. h fe = 1200 (typ.) 2) high emitter-base voltage. v ebo =12v (min.) 3) low v ce (sat). v ce (sat) = 0.18v (typ.) (i c / i b = 500ma / 20ma) 1 sot? 23 (to?236ab) l 2sd2114kvlt1g series 1 base 2 emitter collector 3 z absolute maximum ratings (ta=25 c) parameter v cbo v ceo v ebo i c p c tj tstg 25 v v v a(dc) w c c 20 12 0.5 a(pulse) 1 ? 0.2 150 ? 55 + 150 symbol limits unit ? single pulse pw = 100ms collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature z electrical characteristics (ta=25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) f t ? cob min. 25 20 12 ? ? ? ? ? ? ? ? ? ? 0.18 350 8.0 ? ? ? 0.5 0.5 0.4 ? ? vi c = 10 a i c = 1ma i e = 10 a v cb = 20v v eb = 10v i c /i b = 500ma/20ma v ce = 10v, i e =? 50ma, f = 100mhz v cb = 10v, i e = 0a, f = 1mhz v v a a h fe 820 ? 2700 v ce = 3v, i c = 10ma ? v mhz pf ron ? 0.8 ? i b = 1ma, vi = 100mv(rms), f = 1khz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance output on-resistance ? measured using pulse current h fe values classification, device marking and ordering information device h fe marking shipping L2SD2114KVLT1G 820~1800 bv 3000/tape&reel l2sd2114kvlt3g 820~1800 bv 10000/tape&reel l2sd2114kwlt1g 1200~2700 bw 3000/tape&reel l2sd2114kwlt3g 1200~2700 bw 10000/tape&reel ? 4) we declare that the material of product compliance with rohs requirements. 2 3 rev.o 1/4
leshan radio company, ltd. z electrical characteristic curves 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 ta = 25?c 0.2 a 0.4 a 0.6 a 0.8 a 1.0 a 1.2 a 1.4 a 1.6 a i b = 0 1.8 a 2.0 a collector current : i c (ma) collector to emitter voltage : v ce (v) fig.1 grounded emitter output characteristics( ) 0 200 400 600 800 1000 0246810 ta = 25 c measured using pulse current. 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma 2.0ma i b = 0ma collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics( ? ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 2 5 10 20 50 100 200 500 1000 collector current : i c (ma) base to emitter voltage : v be (v) fig.3 grounded emitter propagation characteristics v ce = 3v measured using pulse current. 25 c ? 25 c ta = 100 c 1 2 5 10 20 50 100 200 500 1000 10 20 50 100 200 500 1000 2000 5000 10000 ta = 25 c measured using pulse current. dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current( ) 3v v ce = 5v 1v 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 v ce = 3v measured using pulse current. dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current( ? ) 25 c ? 25 c ta = 100 c 1 2 2000 1000 200 500 100 20 50 10 5 2 5 10 20 50 100 200 500 1000 ta = 25 c measured using pulse current. 10 25 50 i c /i b = 100 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current( ) collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) 1 2 2000 1000 200 500 100 20 50 10 5 2 5 10 20 50 100 200 5001000 i c / i b = 25 measured using pulse current. fig.7 collector-emitter saturation voltage vs. collector current( ? ) ta = 100 c 25 c ? 25 c base saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.8 base-emitter saturation voltage vs. collector current( ) 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 ta = 25 c pulsed i c /i b = 10 25 50 100 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 base saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.9 base-emitter saturation voltage vs. collector current( ? ) measured using pulse current. l c /l b = 10 25 c 100 c ta =? 25 c l 2sd2114kvlt1g series rev.o 2/4
leshan radio company, ltd. emitter current : i e (ma) transition frequency : f t (mhz) fig.10 gain bandwidth product vs. emitter current -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 10000 5000 2000 500 200 1000 100 20 50 10 ta = 25 c v ce = 10v measured using pulse current. 0.1 0.2 0.5 1 2 5 10 20 50 100 collector output capacitance : cob (pf) collector to base voltage : v cb (v) fig.11 collector output capacitance vs. collector-base voltage 100 200 500 1000 10 20 50 2 5 1 ta = 25 c f = 1mhz i e = 0a 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 on resistance : ron ( ? ) base current : i b (ma) fig.12 output-on resistance vs. base current 0.1 0.2 0.5 1 2 5 10 20 50 100 ta=25 c f=1khz vi=100mv( rms) r l =1k ? z ron measurement circuit ron = r l v 0 v 0 v i ? v 0 r l = 1k ? i b output input 1khz 100mv(rms) v i v l 2sd2114kvlt1g series rev.o 3/4
leshan radio company, ltd. d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. anode 2. no connection 3. cathode 0.031 0.8 sot-23 3 l 2sd2114kvlt1g series rev.o 4/4
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